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CMPA601C025F

CMPA601C025F
Mfr. #:
CMPA601C025F
Manufacturer:
N/A
Description:
RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CMPA601C025F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CMPA601C025F more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF Amplifier
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
QFN-32
Type:
Power Amplifier
Technology:
GaN SiC
Operating Frequency:
2.5 GHz
P1dB - Compression Point:
33 dBm
Gain:
19 dB
Operating Supply Voltage:
32 V
NF - Noise Figure:
-
Operating Supply Current:
360 mA
Packaging:
Waffle
Frequency Range:
0.03 GHz to 2.5 GHz
Product:
GaN
Brand:
Qorvo
Number of Channels:
1 Channel
Development Kit:
TGA2237-SM Eval Board
Input Return Loss:
10 dB
Moisture Sensitive:
Yes
Pd - Power Dissipation:
19 W
Product Type:
RF Amplifier
Factory Pack Quantity:
25
Subcategory:
Wireless & RF Integrated Circuits
Supply Voltage - Min:
20 V
Part # Aliases:
1115388
Unit Weight:
0.006653 oz
Tags
CMPA6, CMPA, CMP
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
RF Amp Module Single Power Amp 12GHz 28V 11-Pin Case 440213
***fspeed
25-W; 6.0 - 12.0-GHz; GaN MMIC; Power Amplifier
***fspeed SCT
Aerospace & Defense, 28 V, 12 GHz, 25W, Flange, RoHS
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Part # Mfg. Description Stock Price
CMPA601C025F-TB
DISTI # CMPA601C025F-TB-ND		WolfspeedEVAL BOARD FOR CMPA601C025F
RoHS: Compliant
Min Qty: 2
Container: Bulk		Temporarily Out of Stock
  • 2:$715.0000
CMPA601C025F
DISTI # 941-CMPA601C025F		Cree, Inc.RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt
RoHS: Compliant		99
  • 1:$848.5000
CMPA601C025F-TB
DISTI # 941-CMPA601C025F-TB		Cree, Inc.RF Amplifier Test Board without GaN MMIC
RoHS: Compliant		1
  • 1:$715.0000
CMPA601C025F
DISTI # CMPA601C025F		WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant		0
  • 50:$848.5000
CMPA601C025F-TB
DISTI # CMPA601C025F-TB		WolfspeedRF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
RoHS: Compliant		2
  • 2:$715.0000
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Availability
Stock:
44
On Order:
2027
Enter Quantity:
Current price of CMPA601C025F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$896.44
$896.44
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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