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IXFK44N80P

IXFK44N80P
Mfr. #:
IXFK44N80P
Manufacturer:
Littelfuse
Description:
MOSFET 44 Amps 800V
Lifecycle:
New from this manufacturer.
Datasheet:
IXFK44N80P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK44N80P DatasheetIXFK44N80P Datasheet (P4)
ECAD Model:
More Information:
IXFK44N80P more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-264-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
44 A
Rds On - Drain-Source Resistance:
190 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1200 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
26.16 mm
Length:
19.96 mm
Series:
IXFK44N80
Transistor Type:
1 N-Channel
Width:
5.13 mm
Brand:
IXYS
Fall Time:
27 ns
Product Type:
MOSFET
Rise Time:
22 ns
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
75 ns
Typical Turn-On Delay Time:
28 ns
Unit Weight:
0.352740 oz
Tags
IXFK44N8, IXFK44, IXFK4, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 Vds 190 mOhm 1040 W Power Mosfet - TO-264
***ical
Trans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
***p One Stop Global
Trans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264
*** Source Electronics
PolarHV HiPerFET Power MOSFET
***i-Key
MOSFET N-CH 800V 44A TO-264
***ukat
N-Ch 800V 44A 1200W 0,19R TO264AA
***ark
Mosfet, N, To-264; Transistor Polarity:n Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.19Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.2Kw Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.2kW; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:12000pF; Current Id Max:44A; Junction to Case Thermal Resistance A:0.12°C/W; N-channel Gate Charge:198nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-264; Polarità Transistor:Canale N; Corrente Continua di Drain Id:44A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.19ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:1.2kW; Modello Case Transistor:TO-264; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017); Capacità Ciss Tipica:12000pF; Carica Gate Canale N:198nC; Corrente Id Max:44A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza Termica A da Giunzione a Case:0.12°C/W; Temperatura di Esercizio Min:-55°C; Tempo di Recupero Inverso trr Max:250ns; Tensione Vds Tipica:800V; Tensione Vgs Max:30V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXFK44N80P
DISTI # V99:2348_15876408		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		24
  • 100:$11.8520
  • 25:$12.8890
  • 1:$15.3050
IXFK44N80P
DISTI # V36:1790_15876408		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		0
  • 25000:$8.1420
  • 12500:$8.1500
  • 2500:$9.7470
  • 250:$13.4600
  • 25:$14.1400
IXFK44N80P
DISTI # IXFK44N80P-ND		IXYS CorporationMOSFET N-CH 800V 44A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		945In Stock
  • 500:$10.1355
  • 100:$11.8830
  • 25:$12.9316
  • 10:$13.9800
  • 1:$15.3800
IXFK44N80P
DISTI # 32436163		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		24
  • 1:$15.3050
IXFK44N80P
DISTI # 32037959		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		24
  • 2:$9.3257
IXFK44N80P
DISTI # 58M7611		IXYS CorporationMOSFET, N, TO-264,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:1.2kW RoHS Compliant: Yes2
  • 500:$11.2100
  • 250:$11.6000
  • 100:$12.0000
  • 50:$12.5200
  • 25:$13.0600
  • 10:$14.2900
  • 1:$15.5300
IXFK44N80P
DISTI # 747-IXFK44N80P		IXYS CorporationMOSFET 44 Amps 800V
RoHS: Compliant		227
  • 1:$15.3800
  • 10:$14.1500
  • 25:$12.9300
  • 50:$12.4000
  • 100:$11.8800
  • 250:$11.4900
  • 500:$11.1000
IXFK44N80P
DISTI # IXFK44N80P		IXYS CorporationN-Ch 800V 44A 1200W 0,19R TO264AA
RoHS: Compliant		49
  • 1:€13.7000
  • 5:€10.7000
  • 25:€9.6000
  • 50:€9.2500
IXFK44N80P
DISTI # 1427311		IXYS CorporationMOSFET, N, TO-2640
  • 100:£9.5400
  • 50:£10.1300
  • 10:£10.3600
  • 5:£12.3400
  • 1:£12.7700
IXFK44N80P
DISTI # 1427311		IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant		0
  • 100:$17.9100
  • 25:$19.4900
  • 10:$21.0700
  • 1:$23.1800
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Availability
Stock:
185
On Order:
2168
Enter Quantity:
Current price of IXFK44N80P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$15.38
$15.38
10
$14.15
$141.50
25
$12.93
$323.25
50
$12.40
$620.00
100
$11.88
$1 188.00
250
$11.49
$2 872.50
500
$11.10
$5 550.00
1000
$10.14
$10 140.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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