SGP23N60UFTU

SGP23N60UFTU
Mfr. #:
SGP23N60UFTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors Dis High Perf IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
SGP23N60UFTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2.1 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
23 A
Pd - Power Dissipation:
100 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
SGP23N60UF
Packaging:
Tube
Continuous Collector Current Ic Max:
23 A
Height:
9.4 mm
Length:
10.1 mm
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
23 A
Gate-Emitter Leakage Current:
+/- 100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
1000
Subcategory:
IGBTs
Part # Aliases:
SGP23N60UFTU_NL
Unit Weight:
0.063493 oz
Tags
SGP23N60U, SGP23, SGP2, SGP
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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SGP23N60UF Series 600 V 23 A Flange Mount PT IGBT - TO-220-3
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Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
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***nell
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
*** Source Electronics
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***r Electronics
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
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***ment14 APAC
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***ineon
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***nsix Microsemi
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***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Part # Mfg. Description Stock Price
SGP23N60UFTU
DISTI # 26699654
ON SemiconductorPTTIGBT TO220 12A 600V11000
  • 1000:$1.5048
SGP23N60UFTU
DISTI # SGP23N60UFTU-ND
ON SemiconductorIGBT 600V 23A 100W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
926In Stock
  • 5000:$1.2125
  • 3000:$1.2277
  • 1000:$1.3186
  • 100:$1.9370
  • 25:$2.2736
  • 10:$2.4100
  • 1:$2.6800
SGP23N60UFTU
DISTI # V36:1790_06359286
ON SemiconductorPTTIGBT TO220 12A 600V0
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail (Alt: SGP23N60UFTU)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€0.9919
    • 500:€1.0069
    • 100:€1.0229
    • 50:€1.0389
    • 25:€1.1439
    • 10:€1.3389
    • 1:€1.6369
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFTU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 10000:$1.2900
    • 1000:$1.3900
    • 2000:$1.3900
    • 4000:$1.3900
    • 6000:$1.3900
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: SGP23N60UFTU)
    RoHS: Compliant
    Min Qty: 199
    Container: Bulk
    Americas - 0
    • 995:$1.4900
    • 1990:$1.4900
    • 199:$1.5900
    • 398:$1.5900
    • 597:$1.5900
    SGP23N60UFTU
    DISTI # 83C0928
    ON SemiconductorTRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,23A I(C),TO-220AB ROHS COMPLIANT: YES0
    • 10000:$1.1900
    • 2500:$1.2500
    • 1000:$1.3500
    • 500:$1.6100
    • 100:$1.8300
    • 10:$2.2500
    • 1:$2.7700
    SGP23N60UFTUON SemiconductorSGP23N60UF Series 600 V 23 A Flange Mount PT IGBT - TO-220-3
    RoHS: Compliant
    300Tube
    • 50:$1.7800
    • 100:$1.4000
    • 250:$1.3400
    • 500:$1.2900
    SGP23N60UFTU
    DISTI # 512-SGP23N60UFTU
    ON SemiconductorIGBT Transistors Dis High Perf IGBT
    RoHS: Compliant
    1204
    • 1:$2.5400
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5100
    • 1000:$1.2500
    SGP23N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    2741
    • 1000:$1.6600
    • 500:$1.7500
    • 100:$1.8200
    • 25:$1.9000
    • 1:$2.0400
    SGP23N60UFTU
    DISTI # 8022238
    ON SemiconductorIGBTFAIRCHILDSGP23N60UFTU, PK55
    • 50:£0.8240
    • 5:£0.8440
    SGP23N60UFTU
    DISTI # 8022238P
    ON SemiconductorIGBTFAIRCHILDSGP23N60UFTU, TU510
    • 50:£0.8240
    SGP23N60UFTU
    DISTI # SGP23N60UFTU
    ON SemiconductorTransistor: IGBT,600V,12A,100W,TO220-3854
    • 1:$2.0200
    • 5:$1.8200
    • 25:$1.6000
    • 100:$1.4400
    SGP23N60UFTU
    DISTI # XSFP00000015535
    Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3.7AI(D),30V, 2-Element, N-Channel and P-Channel,Silicon,Metal-oxide Semiconductor FET, MS-012AA
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    • 162:$2.5500
    • 72:$2.8000
    SGP23N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    Europe - 7
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      Availability
      Stock:
      Available
      On Order:
      1984
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      Current price of SGP23N60UFTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.54
      $2.54
      10
      $2.16
      $21.60
      100
      $1.73
      $173.00
      500
      $1.51
      $755.00
      1000
      $1.25
      $1 250.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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