IFF450B12ME4PB11BPSA1

IFF450B12ME4PB11BPSA1
Mfr. #:
IFF450B12ME4PB11BPSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Modules
Lifecycle:
New from this manufacturer.
Datasheet:
IFF450B12ME4PB11BPSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IFF450B12ME4PB11BPSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.75 V
Continuous Collector Current at 25 C:
450 A
Gate-Emitter Leakage Current:
400 nA
Pd - Power Dissipation:
20 mW
Package / Case:
152 mm x 62.5 mm x 20.5 mm
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Brand:
Infineon Technologies
Mounting Style:
Press Fit
Maximum Gate Emitter Voltage:
15 V
Product Type:
IGBT Modules
Factory Pack Quantity:
6
Subcategory:
IGBTs
Part # Aliases:
SP001377612
Tags
IFF450B, IFF45, IFF4, IFF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans IGBT Module N-CH 1200V 450A Automotive 13-Pin Tray
***ark
Igbt Mod, Dual N Ch, 1.2Kv, 450A; Transistor Polarity:dual N Channel; Dc Collector Current:450A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Summary of Features: Low VCEsat; Tvj op = 150C; Standard Housing; Integrated shunts resistors for direct current measurement; PressFIT control pins and screw power terminals; TIM pre-applied thermal interface material to achieve longest lifetime; Compact and robust design with molded terminals | Benefits: Higher Inverter Power Density; Optimized heat spread guarantees effective thermal management; High current measurement accuracy across a wide temperature range; Reduced systems costs; Compact modules; Easy and most reliable assembly; No plugs and cables required; Ideal for Low Inductive System Designs | Target Applications: ups; solar; drives; cav; eBus
EconoDUAL™ 3 with Integrated Shunt Resistors
Infineon EconoDUAL™ 3 Modules with Integrated Shunt Resistors are used for AC current monitoring and are an effective way to optimize overall system costs of an inverter. With external current sensors no longer needed, space can be saved in the system, reducing material costs and lowering manufacturing efforts. High current measurement accuracy across a wide temperature range is achieved with precise motor control.
Part # Mfg. Description Stock Price
IFF450B12ME4PB11BPSA1
DISTI # V99:2348_19084618
Infineon Technologies AGIFF450B12ME4P_B1112
  • 10:$182.6699
  • 5:$185.5700
  • 1:$188.0900
IFF450B12ME4PB11BPSA1
DISTI # IFF450B12ME4PB11BPSA1-ND
Infineon Technologies AGECONO DUAL 3 W/SHUNTS
RoHS: Compliant
Min Qty: 1
Container: Tray
24In Stock
  • 12:$180.3683
  • 1:$188.3300
IFF450B12ME4PB11BPSA1
DISTI # 30653740
Infineon Technologies AGIFF450B12ME4P_B1112
  • 10:$182.6699
  • 5:$185.5700
  • 1:$188.0900
IFF450B12ME4PB11BPSA1
DISTI # SP001377612
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode and PressFIT/NTC/Current Sense Shunt 1200V 450A Tray (Alt: SP001377612)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 6
  • 1000:€156.4900
  • 500:€160.0900
  • 100:€164.8900
  • 50:€170.4900
  • 25:€176.4900
  • 10:€194.1900
  • 1:€240.1900
IFF450B12ME4PB11BPSA1
DISTI # IFF450B12ME4PB11BPSA1
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode and PressFIT/NTC/Current Sense Shunt 1200V 450A Tray - Trays (Alt: IFF450B12ME4PB11BPSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 0
  • 60:$159.6900
  • 36:$163.6900
  • 24:$167.7900
  • 12:$172.1900
  • 6:$174.4900
IFF450B12ME4PB11BPSA1
DISTI # 93AC7060
Infineon Technologies AGIGBT MOD, DUAL N CH, 1.2KV, 450A,Transistor Polarity:Dual N Channel,DC Collector Current:450A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes2
  • 25:$182.2500
  • 10:$184.8400
  • 5:$189.5500
  • 1:$194.2200
IFF450B12ME4PB11BPSA1
DISTI # 726-IFF450B12ME4PB11
Infineon Technologies AGIGBT Modules
RoHS: Compliant
20
  • 1:$192.3000
  • 5:$187.6700
  • 10:$183.0100
  • 25:$180.4500
IFF450B12ME4PB11BPSA1
DISTI # 2986381
Infineon Technologies AGIGBT MOD, DUAL N CH, 1.2KV, 450A
RoHS: Compliant
2
  • 1:$270.8600
IFF450B12ME4PB11BPSA1
DISTI # 2986381
Infineon Technologies AGIGBT MOD, DUAL N CH, 1.2KV, 450A2
  • 10:£132.0000
  • 5:£137.0000
  • 1:£141.0000
IFF450B12ME4PB11BPSA1
DISTI # XSKDRABV0044340
Infineon Technologies AG 
RoHS: Compliant
18 in Stock0 on Order
  • 18:$237.1900
  • 6:$254.1300
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Headers & Wire Housings 20 SIL VERT PIN HDR TIN
Availability
Stock:
20
On Order:
2003
Enter Quantity:
Current price of IFF450B12ME4PB11BPSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$192.30
$192.30
5
$187.67
$938.35
10
$183.01
$1 830.10
25
$180.45
$4 511.25
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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