NGTB20N120LWG

Mfr. #:: NGTB20N120LWG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 1200V/20A IGBT FSI TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB20N120LWG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NGTB20N120LWG Datasheet NGTB20N120LWG Datasheet (P4-P6)NGTB20N120LWG Datasheet (P7-P9)
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Product Attribute
Attribute Value

Manufacturer: ON Semiconductor

Product Category: IGBTs - Single

Series: NGTB20N120L

Packaging: Tube

Unit-Weight: 0.229281 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247

Power-Max: 192W

Reverse-Recovery-Time-trr: -

Current-Collector-Ic-Max: 40A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT-Type: Trench Field Stop

Current-Collector-Pulsed-Icm: 200A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 20A

Switching-Energy: 3.1mJ (on), 700μJ (off)

Gate-Charge: 200nC

Td-on-off-25°C: 86ns/235ns

Test-Condition: 600V, 20A, 10 Ohm, 15V

Pd-Power-Dissipation: 77 W

Collector-Emitter-Voltage-VCEO-Max: 1200 V

Collector-Emitter-Saturation-Voltage: 2.2 V

Continuous-Collector-Current-at-25-C: 40 A

Gate-Emitter-Leakage-Current: 100 nA

Maximum-Gate-Emitter-Voltage: 20 V

Tags: NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT

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Vacuum Packaging with PL

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NGTB20N120LWG Description

***ical: Trans IGBT Chip N=-CH 1200V 40A 192000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: ON SEMICONDUCTOR - NGTB20N120LWG - IGBT, 1200V, 20A, FS1, TO-247-3

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Ch 1200V 40A FS 1.8V TO247

***nell: IGBT, 1200V, 20A, FS1, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AD Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - Leaded 390pF 100volts C0G LS=5mm +/-5%

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IRG8P25N120 - DISCRETE IGBT WITH

***ark: G8, 1200V, 25A, COPAK-247AD, TUBE

***ical: Trans IGBT Chip N=-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: TrenchStop Series 1200 V 30 A Through Hole IGBT Trench Field Stop - PG-TO247-3-1

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.3pF 25volts C0G +/-0.25pF

***ment14 APAC: IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W

***ineon SCT: Infineon's 1200 V, 15 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N-CH 1200V 30A 229000mW 3-Pin(3+Tab) TO-247 Tube

***-Wing Technology: ON SEMICONDUCTOR - NGTB15N120LWG - IGBT, 1200V, 15A, FS1, TO-247-3

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Ch 1200V 30A FS 1.8V TO247

***S: French Electronic Distributor since 1988

***nell: IGBT, 1200V, 15A, FS1, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ark: Igbt, Single, 1.2Kv, 40A, To-247Ac-3

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IGBT WITH ULTRAFAST SOFT RECOVER

***el Electronic: CAP CER 47PF 100V 5% NP0 RADIAL

***nell: IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No.

***ical: Trans IGBT Chip N-CH 1350V 40A 350000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT, 1350V 20A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel

*** Source Electronics: IGBT with Monolithic Free Wheeling Diode

***i-Key: IGBT TRENCH/FS 1350V 40A TO247

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: TRANSISTOR, IGBT, 2.2V, 40A, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 394W; Collector Emitter Voltage V(br)ceo: 1.35kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C

***ark: Igbt Single Transistor, 50 A, 1.85 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 1200V, 25A, TO247; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

Market price

Part #	Mfg.	Description	Stock	Price
NGTB20N120LWG DISTI # NGTB20N120LWGOS-ND	ON Semiconductor	IGBT 1200V 40A 192W TO247-3 RoHS: Compliant Min Qty: 150 Container: Tube	Limited Supply - Call
NGTB20N120LWG DISTI # 70341216	ON Semiconductor	IGBT N-Ch 1200V 40A FS 1.8V TO247 RoHS: Compliant	0	10:$3.1900 100:$3.0300 250:$2.8800 500:$2.7400
NGTB20N120LWG	ON Semiconductor	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	555	1000:$1.7500 500:$1.8400 100:$1.9200 25:$2.0000 1:$2.1500

Image	Part #	Description
	Mfr.#: NGTB20N60L2TF1G OMO.#: OMO-NGTB20N60L2TF1G	IGBT Transistors 600V 20A IGBT TO-3PF
	Mfr.#: NGTB20N120LWG OMO.#: OMO-NGTB20N120LWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A IGBT FSI TO-247
	Mfr.#: NGTB20N120IHLWG OMO.#: OMO-NGTB20N120IHLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A IGBT FSI TO-247
	Mfr.#: NGTB20N120IHRWG OMO.#: OMO-NGTB20N120IHRWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A RC IGBT FSII
	Mfr.#: NGTB20H135IHRWG OMO.#: OMO-NGTB20H135IHRWG-1190	New and Original
	Mfr.#: NGTB20N120 OMO.#: OMO-NGTB20N120-1190	New and Original
	Mfr.#: NGTB20N120IH OMO.#: OMO-NGTB20N120IH-1190	New and Original
	Mfr.#: NGTB20N120IHL OMO.#: OMO-NGTB20N120IHL-1190	New and Original
	Mfr.#: NGTB20N120IHR OMO.#: OMO-NGTB20N120IHR-1190	New and Original
	Mfr.#: NGTB20N120L OMO.#: OMO-NGTB20N120L-1190	New and Original

NGTB20N120LWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes