IPB64N25S3-20

IPB64N25S3-20
Mfr. #:
IPB64N25S3-20
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 250V 64A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB64N25S3-20 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB64N25S3-20 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
250 V
Id - Continuous Drain Current:
64 A
Rds On - Drain-Source Resistance:
17.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
89 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
IPB64N25
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
45 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
IPB64N25S320ATMA1 IPB64N25S32XT SP000876596
Unit Weight:
0.139332 oz
Tags
IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.7122
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1
Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB64N25S320ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.3900
  • 2000:$3.2900
  • 4000:$3.1900
  • 6000:$3.0900
  • 10000:$2.9900
IPB64N25S320ATMA1
DISTI # SP000876596
Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000876596)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€3.0900
  • 2000:€2.9900
  • 4000:€2.9900
  • 6000:€2.7900
  • 10000:€2.6900
IPB64N25S320ATMA1
DISTI # 13AC9030
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes0
  • 1:$6.3900
  • 10:$5.4300
  • 25:$5.1900
  • 50:$4.9500
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
IPB64N25S3-20
DISTI # 726-IPB64N25S3-20
Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant
42
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S320ATMA1
DISTI # 726-IPB64N25S320ATMA
Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant
0
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S3-20Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB2206
  • 1819:$1.5750
  • 1112:$1.6500
  • 1:$4.5000
IPB64N25S320ATMA1
DISTI # 1702295
Infineon Technologies AGMOSFET N-CH 250V 64A OPTIMOS-T D2PAK, RL1000
  • 1000:£2.3840
  • 2000:£2.3050
IPB64N25S320ATMA1
DISTI # 2725843
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant
0
  • 1:£4.4800
  • 10:£4.0000
  • 100:£3.4200
  • 250:£3.2400
  • 500:£2.9900
IPB64N25S320ATMA1
DISTI # 2725843
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant
0
  • 1:$12.1100
  • 10:$10.8100
  • 100:$8.8600
  • 500:$7.1800
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of IPB64N25S3-20 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.06
$6.06
10
$5.48
$54.80
25
$5.22
$130.50
100
$4.53
$453.00
250
$4.33
$1 082.50
500
$3.95
$1 975.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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