SSM3J325F,LF

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-346-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

2 A

Rds On - Drain-Source Resistance:

311 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

4.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

600 mW

Configuration:

Single

Packaging:

Reel

Height:

1.1 mm

Length:

2.9 mm

Series:

SSM3J325

Transistor Type:

1 P-Channel

Width:

1.5 mm

Brand:

Toshiba

Forward Transconductance - Min:

4.4 S

Product Type:

MOSFET

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Unit Weight:

0.000423 oz

Tags

SSM3J325, SSM3J32, SSM3J3, SSM3J, SSM3, SSM