RQ6E055BNTCR

RQ6E055BNTCR
Mfr. #:
RQ6E055BNTCR
Manufacturer:
Rohm Semiconductor
Description:
MOSFET Nch 30V 5.5A Power MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
RQ6E055BNTCR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
RQ6E055BNTCR more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-457-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
5.5 A
Rds On - Drain-Source Resistance:
19 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
8.6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.25 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
ROHM Semiconductor
Forward Transconductance - Min:
3.4 S
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
16 ns
Typical Turn-On Delay Time:
7 ns
Part # Aliases:
RQ6E055BN
Tags
RQ6E055, RQ6E05, RQ6E, RQ6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 30V 5.5A 6-Pin TSMT T/R / MOSFET N-CH 30V 5.5A TSMT
***nell
MOSFET, N-CH, 30V, 5.5A, TSMT-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 1.25W; Transistor Case Style: TSMT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***et
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***or
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***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
***ure Electronics
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***nell
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
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***ark
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***nell
MOSFET, AUTO, N-CH, 30V, 7.1A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***emi
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***nell
MOSFET, N-CH, 30V, 8A, SUPERSOT-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
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***ark
N CHANNEL MOSFET, 30V, 6.6A, 1206A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.2W RoHS Compliant: Yes
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Part # Mfg. Description Stock Price
RQ6E055BNTCR
DISTI # RQ6E055BNTCRCT-ND
ROHM SemiconductorMOSFET N-CH 30V 5.5A TSMT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1998In Stock
  • 1000:$0.2504
  • 500:$0.3240
  • 100:$0.4124
  • 10:$0.5520
  • 1:$0.6500
RQ6E055BNTCR
DISTI # RQ6E055BNTCRDKR-ND
ROHM SemiconductorMOSFET N-CH 30V 5.5A TSMT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1998In Stock
  • 1000:$0.2504
  • 500:$0.3240
  • 100:$0.4124
  • 10:$0.5520
  • 1:$0.6500
RQ6E055BNTCR
DISTI # RQ6E055BNTCRTR-ND
ROHM SemiconductorMOSFET N-CH 30V 5.5A TSMT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.2217
RQ6E055BNTCR
DISTI # RQ6E055BNTCR
ROHM SemiconductorN-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W Power Dissipation Low-On Resistance 6-Pin SOT-457 Emboss T/R - Tape and Reel (Alt: RQ6E055BNTCR)
Min Qty: 3000
Container: Reel
Americas - 0
    RQ6E055BNTCR
    DISTI # RQ6E055BNTCR
    ROHM SemiconductorN-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W Power Dissipation Low-On Resistance 6-Pin SOT-457 Emboss T/R (Alt: RQ6E055BNTCR)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel
    Europe - 0
    • 1000:€0.0879
    • 500:€0.0949
    • 100:€0.1029
    • 50:€0.1119
    • 25:€0.1379
    • 10:€0.1769
    • 1:€0.2479
    RQ6E055BNTCR
    DISTI # 755-RQ6E055BNTCR
    ROHM SemiconductorMOSFET Nch 30V 5.5A Power MOSFET2028
    • 1:$0.5900
    • 10:$0.4980
    • 100:$0.2740
    • 1000:$0.2120
    • 3000:$0.1880
    RQ6E055BNTCRROHM Semiconductor 2424
    • 501:$0.3200
    • 126:$0.4000
    • 1:$0.8000
    RQ6E055BNTCR
    DISTI # 1501471
    ROHM SemiconductorMOSFET N-CH 30V 4.5A SOT-457T, PK150
    • 2500:£0.1500
    • 600:£0.1540
    • 300:£0.1580
    • 150:£0.1630
    • 50:£0.1800
    RQ6E055BNTCR
    DISTI # 2706769
    ROHM SemiconductorMOSFET, N-CH, 30V, 5.5A, TSMT-6
    RoHS: Compliant
    0
    • 1000:$0.3780
    • 500:$0.4890
    • 100:$0.6220
    • 10:$0.8320
    • 1:$0.9800
    RQ6E055BNTCR
    DISTI # 2706769
    ROHM SemiconductorMOSFET, N-CH, 30V, 5.5A, TSMT-60
    • 500:£0.1650
    • 250:£0.1870
    • 100:£0.2090
    • 25:£0.4010
    • 5:£0.4300
    RQ6E055BNTCRROHM Semiconductor 30
    • 1:$0.6400
    • 10:$0.3700
    • 50:$0.2300
    • 100:$0.2000
    • 500:$0.1700
    • 1000:$0.1600
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    Availability
    Stock:
    228
    On Order:
    2211
    Enter Quantity:
    Current price of RQ6E055BNTCR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.59
    $0.59
    10
    $0.50
    $4.98
    100
    $0.27
    $27.40
    1000
    $0.21
    $212.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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