2ST501T

Mfr. #: 2ST501T
Manufacturer: STMicroelectronics
Description: Darlington Transistors PWR BIP/S.SIGNAL
Lifecycle: New from this manufacturer.
Datasheet: 2ST501T Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2ST501T Overview

Product belongs to the 2ST501 series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 350V DC current gain minimum (hFE) of Ic/Vce at 2000 @ 2A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 2mA, 2A Power-off control: 100 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 350 V The transistor polarity is NPN. 5 V rating of 5 V This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 2000. 500 uA Maximum Collector Cut-off Current;

2ST501T Image

2ST501T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2ST501T Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single, Pre-Biased
  • Series 2ST501
  • Packaging Tube
  • Unit-Weight 0.081130 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • Power-Max 100W
  • Transistor-Type NPN - Darlington
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 350V
  • DC-Current-Gain-hFE-Min-Ic-Vce 2000 @ 2A, 2V
  • Vce-Saturation-Max-Ib-Ic 1.5V @ 2mA, 2A
  • Current-Collector-Cutoff-Max 100μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 100 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 350 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 5 V
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 2000
  • Maximum-Collector-Cut-off-Current 500 uA

2ST501T

2ST501T Specifications

2ST501T FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 2ST501

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.081130 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-220AB.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN - Darlington

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 4A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 350V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 2000 @ 2A, 2V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.5V @ 2mA, 2A.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 100 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 350 V

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 4 A

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 2000

  • A: At what frequency does the Maximum-Collector-Cut-off-Current?

    Q: The product Maximum-Collector-Cut-off-Current is 500 uA.

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