2STN1360

Mfr. #: 2STN1360
Manufacturer: STMicroelectronics
Description: Bipolar Transistors - BJT LOW VOLTAGE FAST SWITCHING NPN POWER
Lifecycle: New from this manufacturer.
Datasheet: 2STN1360 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2STN1360 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.006632 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Surface Mount mounting type Supplier device package: SOT-223 Configuration Single Transistor type: NPN Maximum current collector Ic is 3A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 160 @ 1A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 150mA, 3A Power-off control: 1600 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. The 80 V voltage rating is 40 V. 6 V rating of 5 V Max DC collector current: 3 A Gain-Bandwidth-Product: 130 MHz Minimum hfe for DC collector-base gain is 80.

2STN1360 Image

2STN1360

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2STN1360 Specifications
  • Manufacturer ST Microelectronic
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.006632 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-223
  • Configuration Single
  • Power-Max 1.6W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 3A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 160 @ 1A, 2V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 150mA, 3A
  • Current-Collector-Cutoff-Max 100nA (ICBO)
  • Frequency-Transition 130MHz
  • Pd-Power-Dissipation 1600 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 80 V
  • Emitter-Base-Voltage-VEBO 6 V
  • Maximum-DC-Collector-Current 3 A
  • Gain-Bandwidth-Product-fT 130 MHz
  • DC-Collector-Base-Gain-hfe-Min 80

2STN1360

2STN1360 Specifications

2STN1360 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.006632 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-261-4, TO-261AA.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-223.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 3A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 60V

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 160 @ 1A, 2V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 500mV @ 150mA, 3A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 1600 mW.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 80 V

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 6 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 3 A.

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 130 MHz.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 80

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