BFU730F,115

BFU730F,115 Overview

This product is manufactured by NXP. The Transistor Type is Bipolar. The 205. The maximum 2.8 V. The product can operate at a maximum temperature of SMD/SMT. SOT343F-4 package/case type is utilized by this product. Reel packaging for easy dispensing Maximum DC Current Gain hFE: 555 The height of the product is 0.75 mm. 2.2 mm long This device belongs to the RF Silicon Germanium type. NXP Semiconductors is a trusted brand for quality electronics 197 mW RF Bipolar Transistors product type 3000 of 100 Transistors as subcategory This product is also known by the 934064614115 number of 934069005115. 1. 0.000235 oz of Unit Weight

BFU730F,115 Image

BFU730F,115 Specifications

• Manufacturer: NXP
• Product Category: RF Bipolar Transistors
• RoHS: Y
• Transistor Type: Bipolar
• Technology: SiGe
• DC Collector/Base Gain hfe Min: 205
• Collector- Emitter Voltage VCEO Max: 2.8 V
• Emitter- Base Voltage VEBO: 1 V
• Continuous Collector Current: 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT343F-4
• Packaging: Reel
• Collector- Base Voltage VCBO: 10 V
• DC Current Gain hFE Max: 555
• Height: 0.75 mm
• Length: 2.2 mm
• Operating Frequency: 55 GHz
• Type: RF Silicon Germanium
• Width: 1.35 mm
• Brand: NXP Semiconductors
• Pd - Power Dissipation: 197 mW
• Product Type: RF Bipolar Transistors
• Factory Pack Quantity: 3000
• Subcategory: Transistors
• Part # Aliases: 934064614115
• Unit Weight: 0.000235 oz

BFU730F,115 FAQ

• A: At what frequency does the Manufacturer?

  Q: The product Manufacturer is NXP.

• A: Is the cutoff frequency of the product Transistor Type?

  Q: Yes, the product's Transistor Type is indeed Bipolar

• A: At what frequency does the DC Collector/Base Gain hfe Min?

  Q: The product DC Collector/Base Gain hfe Min is 205.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 2.8 V

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed SMD/SMT

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is SOT343F-4.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Reel.

• A: Is the cutoff frequency of the product DC Current Gain hFE Max?

  Q: Yes, the product's DC Current Gain hFE Max is indeed 555

• A: What is the Height of the product?

  Q: The Height of the product is 0.75 mm.

• A: At what frequency does the Length?

  Q: The product Length is 2.2 mm.

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Silicon Germanium

• A: What is the Brand of the product?

  Q: The Brand of the product is NXP Semiconductors.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 197 mW.

• A: At what frequency does the Product Type?

  Q: The product Product Type is RF Bipolar Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 3000.

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is Transistors.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 934064614115.

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.000235 oz.