CSD19506KTTT

Mfr. #: CSD19506KTTT
Manufacturer: Texas Instruments
Description: MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175
Lifecycle: New from this manufacturer.
Datasheet: CSD19506KTTT Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19506KTTT Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. TO-263-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 80 V 200 A continuous drain current Rds On value of 2.3 mOhms Gate-Source Threshold Voltage Range: 2.5 V Gate-Source Voltage: 20 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. 375 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 19.7 mm. 9.25 mm long The Transistor Type is 1 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 297 S 5 ns fall time Yes regarding Moisture Sensitivity MOSFET product type Rise Time is 7 ns. 50 of 100 MOSFETs as subcategory Turn-off delay time is 30 ns. The typical turn-on delay time is 14 ns.

CSD19506KTTT Image

CSD19506KTTT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19506KTTT Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: N
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: TO-263-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 80 V
  • Id - Continuous Drain Current: 200 A
  • Rds On - Drain-Source Resistance: 2.3 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.5 V
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 120 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd - Power Dissipation: 375 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 19.7 mm
  • Length: 9.25 mm
  • Series: CSD19506KTT
  • Transistor Type: 1 N-Channel
  • Width: 10.26 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 297 S
  • Fall Time: 5 ns
  • Moisture Sensitive: Yes
  • Product Type: MOSFET
  • Rise Time: 7 ns
  • Factory Pack Quantity: 50
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 30 ns
  • Typical Turn-On Delay Time: 14 ns

CSD19506KTTT

CSD19506KTTT Specifications

CSD19506KTTT FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-263-3.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 80 V

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 200 A

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 2.3 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.5 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 20 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 175 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 375 W.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Channel Mode?

    Q: The product Channel Mode is Enhancement.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: What is the Height of the product?

    Q: The Height of the product is 19.7 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 9.25 mm.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 1 N-Channel.

  • A: At what frequency does the Brand?

    Q: The product Brand is Texas Instruments.

  • A: Is the cutoff frequency of the product Forward Transconductance - Min?

    Q: Yes, the product's Forward Transconductance - Min is indeed 297 S

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 5 ns

  • A: At what frequency does the Moisture Sensitive?

    Q: The product Moisture Sensitive is Yes.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 7 ns.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 50.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 30 ns.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 14 ns.

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