CSD88539ND

Mfr. #: CSD88539ND
Manufacturer: Texas Instruments
Description: MOSFET 60-V Dual N-Channel Power MOSFET
Lifecycle: New from this manufacturer.
Datasheet: CSD88539ND Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD88539ND Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. SOIC-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 60 V 15 A continuous drain current Rds On value of 28 mOhms Gate-Source Threshold Voltage Range: 2.6 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.1 W This product has a Dual configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1.75 mm. 4.9 mm long The Transistor Type is 2 N-Channel Power MOSFET. Texas Instruments is a trusted brand for quality electronics 4 ns fall time MOSFET product type Rise Time is 9 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 14 ns. The typical turn-on delay time is 5 ns. 1. 0.019048 oz of Unit Weight

CSD88539ND Image

CSD88539ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD88539ND Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: SOIC-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 60 V
  • Id - Continuous Drain Current: 15 A
  • Rds On - Drain-Source Resistance: 28 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.6 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 7.2 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.1 W
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1.75 mm
  • Length: 4.9 mm
  • Series: CSD88539ND
  • Transistor Type: 2 N-Channel Power MOSFET
  • Width: 3.9 mm
  • Brand: Texas Instruments
  • Fall Time: 4 ns
  • Product Type: MOSFET
  • Rise Time: 9 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 14 ns
  • Typical Turn-On Delay Time: 5 ns
  • Unit Weight: 0.019048 oz

CSD88539ND

CSD88539ND Specifications

CSD88539ND FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is SOIC-8.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 60 V.

  • A: At what frequency does the Id - Continuous Drain Current?

    Q: The product Id - Continuous Drain Current is 15 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 28 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.6 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 10 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 2.1 W.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 1.75 mm.

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 4.9 mm

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 2 N-Channel Power MOSFET.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 4 ns.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: At what frequency does the Rise Time?

    Q: The product Rise Time is 9 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 2500

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 14 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 5 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.019048 oz.

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Quantity
Unit Price
Ext. Price
1
$0.81
$0.81
10
$0.67
$6.70
100
$0.43
$43.20
1000
$0.34
$345.00
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