MRF13750H-1300

MRF13750H-1300 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 20.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. 1.333 kW RF MOSFET Transistors product type 1 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V This product is also known by the 935368922598 number of 934069005115.

MRF13750H-1300 Image

MRF13750H-1300 Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• Transistor Polarity: Dual N-Channel
• Technology: Si
• Id - Continuous Drain Current: 2.8 A
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
• Gain: 20.5 dB
• Output Power: 750 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: NI-1230H-4
• Operating Frequency: 700 MHz to 1300 MHz
• Series: MRF13750H
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Number of Channels: 2 Channel
• Pd - Power Dissipation: 1.333 kW
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 1
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 1.3 V
• Part # Aliases: 935368922598

MRF13750H-1300 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: Is the cutoff frequency of the product Id - Continuous Drain Current?

  Q: Yes, the product's Id - Continuous Drain Current is indeed 2.8 A

• A: What is the Vds - Drain-Source Breakdown Voltage of the product?

  Q: The Vds - Drain-Source Breakdown Voltage of the product is - 500 mV, 105 V.

• A: What is the Gain of the product?

  Q: The Gain of the product is 20.5 dB.

• A: What is the Output Power of the product?

  Q: The Output Power of the product is 750 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

• A: What is the Maximum Operating Temperature of the product?

  Q: The Maximum Operating Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed SMD/SMT

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed NI-1230H-4

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed NXP Semiconductors

• A: What is the Number of Channels of the product?

  Q: The Number of Channels of the product is 2 Channel.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 1.333 kW.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is RF MOSFET Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 1.

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed MOSFETs

• A: At what frequency does the Vgs - Gate-Source Voltage?

  Q: The product Vgs - Gate-Source Voltage is - 6 V, 10 V.

• A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

  Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.3 V

• A: At what frequency does the Part # Aliases?

  Q: The product Part # Aliases is 935368922598.