PRF13750HR9

PRF13750HR9 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 19.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4S-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. RF MOSFET Transistors product type MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V

PRF13750HR9 Image

PRF13750HR9 Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• RoHS: Y
• Transistor Polarity: N-Channel
• Technology: Si
• Id - Continuous Drain Current: 2.8 A
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
• Gain: 19.5 dB
• Output Power: 750 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: NI-1230H-4S-4
• Operating Frequency: 0.7 GHz to 1.3 GHz
• Series: MRF13750H
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Number of Channels: 2 Channel
• Product Type: RF MOSFET Transistors
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 1.3 V

PRF13750HR9 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: At what frequency does the Id - Continuous Drain Current?

  Q: The product Id - Continuous Drain Current is 2.8 A.

• A: What is the Vds - Drain-Source Breakdown Voltage of the product?

  Q: The Vds - Drain-Source Breakdown Voltage of the product is - 500 mV, 105 V.

• A: What is the Gain of the product?

  Q: The Gain of the product is 19.5 dB.

• A: Is the cutoff frequency of the product Output Power?

  Q: Yes, the product's Output Power is indeed 750 W

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 150 C.

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed SMD/SMT

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed NI-1230H-4S-4

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed NXP Semiconductors

• A: Is the cutoff frequency of the product Number of Channels?

  Q: Yes, the product's Number of Channels is indeed 2 Channel

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed RF MOSFET Transistors

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is MOSFETs.

• A: What is the Vgs - Gate-Source Voltage of the product?

  Q: The Vgs - Gate-Source Voltage of the product is - 6 V, 10 V.

• A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

  Q: The product Vgs th - Gate-Source Threshold Voltage is 1.3 V.