| Mfr. #: | SCTW90N65G2V |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | SCTW90N65G2V Datasheet |
This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. HIP247-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 650 V 90 A continuous drain current Rds On value of 25 mOhms Gate-Source Threshold Voltage Range: 1.9 V Gate-Source Voltage: 10 V to 22 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 200 C. 390 W This product has a Single configuration. The Channel Mode is set to Enhancement. Tube packaging for easy dispensing The Transistor Type is 1 N-Channel. STMicroelectronics is a trusted brand for quality electronics 16 ns fall time MOSFET product type Rise Time is 38 ns. 600 of 100 MOSFETs as subcategory Turn-off delay time is 58 ns. The typical turn-on delay time is 26 ns.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SCTW90N65G2V Specifications
A: At what frequency does the Manufacturer?
Q: The product Manufacturer is STMicroelectronics.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: At what frequency does the Package / Case?
Q: The product Package / Case is HIP247-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 650 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 90 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 25 mOhms.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.9 V
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is 10 V to 22 V.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 200 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 390 W.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: At what frequency does the Brand?
Q: The product Brand is STMicroelectronics.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 16 ns
A: Is the cutoff frequency of the product Product Type?
Q: Yes, the product's Product Type is indeed MOSFET
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 38 ns
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 600.
A: What is the Subcategory of the product?
Q: The Subcategory of the product is MOSFETs.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 58 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 26 ns.