STGW80H65DFB

Mfr. #: STGW80H65DFB
Manufacturer: STMicroelectronics
Description: IGBT Transistors Trench gte FieldStop IGBT 650V 80A
Lifecycle: New from this manufacturer.
Datasheet: STGW80H65DFB Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGW80H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.6 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 80 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGW80H65DFB Image

STGW80H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGW80H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 1.6 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 120 A
  • Pd - Power Dissipation: 469 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGW80H65DFB
  • Packaging: Tube
  • Continuous Collector Current Ic Max: 80 A
  • Brand: STMicroelectronics
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs
  • Unit Weight: 1.340411 oz

STGW80H65DFB

STGW80H65DFB Specifications

STGW80H65DFB FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-247-3.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed Through Hole

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Collector- Emitter Voltage VCEO Max?

    Q: The product Collector- Emitter Voltage VCEO Max is 650 V.

  • A: At what frequency does the Collector-Emitter Saturation Voltage?

    Q: The product Collector-Emitter Saturation Voltage is 1.6 V.

  • A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

    Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

  • A: At what frequency does the Continuous Collector Current at 25 C?

    Q: The product Continuous Collector Current at 25 C is 120 A.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 469 W.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Continuous Collector Current Ic Max of the product?

    Q: The Continuous Collector Current Ic Max of the product is 80 A.

  • A: What is the Brand of the product?

    Q: The Brand of the product is STMicroelectronics.

  • A: At what frequency does the Gate-Emitter Leakage Current?

    Q: The product Gate-Emitter Leakage Current is 250 nA.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is IGBT Transistors.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 600.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is IGBTs.

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 1.340411 oz

1680 In Stock
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Please enter the quantity you need to buy.
Quantity
Unit Price
Ext. Price
1
$7.13
$7.13
10
$6.45
$64.50
25
$6.15
$153.75
100
$5.34
$534.00
250
$5.10
$1 275.00
500
$4.65
$2 325.00
1000
$4.05
$4 050.00
2500
$3.90
$9 750.00
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