STGWA80H65DFB

Mfr. #: STGWA80H65DFB
Manufacturer: STMicroelectronics
Description: IGBT Transistors IGBT & Power Bipolar
Lifecycle: New from this manufacturer.
Datasheet: STGWA80H65DFB Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA80H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 80 A The height of the product is 5.3 mm. 20.3 mm long STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGWA80H65DFB Image

STGWA80H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA80H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 2 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 120 A
  • Pd - Power Dissipation: 469 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA80H65DFB
  • Continuous Collector Current Ic Max: 80 A
  • Height: 5.3 mm
  • Length: 20.3 mm
  • Operating Temperature Range: - 55 C to + 175 C
  • Width: 15.9 mm
  • Brand: STMicroelectronics
  • Continuous Collector Current: 120 A
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs
  • Unit Weight: 1.340411 oz

STGWA80H65DFB

STGWA80H65DFB Specifications

STGWA80H65DFB FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is TO-247-3.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Collector- Emitter Voltage VCEO Max?

    Q: The product Collector- Emitter Voltage VCEO Max is 650 V.

  • A: At what frequency does the Collector-Emitter Saturation Voltage?

    Q: The product Collector-Emitter Saturation Voltage is 2 V.

  • A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

    Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

    Q: Yes, the product's Continuous Collector Current at 25 C is indeed 120 A

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 469 W.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 175 C.

  • A: At what frequency does the Continuous Collector Current Ic Max?

    Q: The product Continuous Collector Current Ic Max is 80 A.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 5.3 mm

  • A: At what frequency does the Length?

    Q: The product Length is 20.3 mm.

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: Is the cutoff frequency of the product Gate-Emitter Leakage Current?

    Q: Yes, the product's Gate-Emitter Leakage Current is indeed 250 nA

  • A: At what frequency does the Product Type?

    Q: The product Product Type is IGBT Transistors.

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 600.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed IGBTs

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 1.340411 oz.

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