| Mfr. #: | BFG35,115 |
|---|---|
| Manufacturer: | NXP Semiconductors |
| Description: | RF Bipolar Transistors NPN 10V 150mA 4GHZ |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | BFG35,115 Datasheet |
Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product TO-261-4, TO-261AA Surface Mount mounting type Supplier device package: SC-73 Transistor type: NPN Maximum current collector Ic is 150mA . Maximum collector-emitter breakdown voltage of 18V DC current gain minimum (hFE) of Ic/Vce at 25 @ 100mA, 10V. - typical noise figure The device offers a - of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFG35,115 Specifications
A: At what frequency does the Series?
Q: The product Series is -.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-261-4, TO-261AA.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is SC-73.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 150mA.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 18V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 25 @ 100mA, 10V.
A: Is the cutoff frequency of the product Noise-Figure-dB-Typ-f?
Q: Yes, the product's Noise-Figure-dB-Typ-f is indeed -
A: What is the Gain of the product?
Q: The Gain of the product is -.