BFU520R

Mfr. #: BFU520R
Manufacturer: NXP Semiconductors
Description: RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
Lifecycle: New from this manufacturer.
Datasheet: BFU520R Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU520R Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-253-4, TO-253AA Si is the technology used. Surface Mount mounting type Supplier device package: SOT-143B Configuration Dual Transistor type: NPN Maximum current collector Ic is 30mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 5mA, 8V. 0.65dB @ 900MHz typical noise figure The device offers a 20dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 50 mA This product is capable of handling a 5 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU520R Image

BFU520R

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU520R Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case TO-253-4, TO-253AA
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-143B
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 30mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 5mA, 8V
  • Frequency-Transition 10.5GHz
  • Noise-Figure-dB-Typ-f 0.65dB @ 900MHz
  • Gain 20dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 50 mA
  • Continuous-Collector-Current 5 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU520R

BFU520R Specifications

BFU520R FAQ
  • A: At what frequency does the Series?

    Q: The product Series is Automotive, AEC-Q101.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-253-4, TO-253AA.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-143B.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 30mA.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 12V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 60 @ 5mA, 8V

  • A: Is the cutoff frequency of the product Noise-Figure-dB-Typ-f?

    Q: Yes, the product's Noise-Figure-dB-Typ-f is indeed 0.65dB @ 900MHz

  • A: At what frequency does the Gain?

    Q: The product Gain is 20dB.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 450 mW.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 40 C.

  • A: What is the Operating-Frequency of the product?

    Q: The Operating-Frequency of the product is 900 MHz.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 16 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 2 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 50 mA.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 5 mA.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 60.

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