BFU530AR

Mfr. #: BFU530AR
Manufacturer: NXP Semiconductors
Description: RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
Lifecycle: New from this manufacturer.
Datasheet: BFU530AR Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU530AR Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.000310 oz SMD/SMT Mounting-Style TO-236-3, SC-59, SOT-23-3 Si is the technology used. Surface Mount mounting type Supplier device package: SOT-23 (TO-236AB) Configuration Dual Transistor type: NPN Maximum current collector Ic is 40mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 10mA, 8V. 0.6dB @ 900MHz typical noise figure The device offers a 18dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 65 mA This product is capable of handling a 10 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU530AR Image

BFU530AR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU530AR Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.000310 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-236-3, SC-59, SOT-23-3
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-23 (TO-236AB)
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 40mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 10mA, 8V
  • Frequency-Transition 11GHz
  • Noise-Figure-dB-Typ-f 0.6dB @ 900MHz
  • Gain 18dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 65 mA
  • Continuous-Collector-Current 10 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU530AR

BFU530AR Specifications

BFU530AR FAQ
  • A: At what frequency does the Series?

    Q: The product Series is Automotive, AEC-Q101.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.000310 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-236-3, SC-59, SOT-23-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-23 (TO-236AB).

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 40mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 10mA, 8V.

  • A: What is the Noise-Figure-dB-Typ-f of the product?

    Q: The Noise-Figure-dB-Typ-f of the product is 0.6dB @ 900MHz.

  • A: At what frequency does the Gain?

    Q: The product Gain is 18dB.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 450 mW

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 40 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 900 MHz

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 16 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 2 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 65 mA.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 10 mA.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 60

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