BFU530R

Mfr. #: BFU530R
Manufacturer: NXP Semiconductors
Description: RF TRANS NPN 12V 11GHZ SOT143B
Lifecycle: New from this manufacturer.
Datasheet: BFU530R Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU530R Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-253-4, TO-253AA Si is the technology used. Surface Mount mounting type Supplier device package: SOT-143B Configuration Dual Transistor type: NPN Maximum current collector Ic is 40mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 10mA, 8V. 0.6dB @ 900MHz typical noise figure The device offers a 21.5dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 65 mA This product is capable of handling a 10 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU530R Image

BFU530R

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU530R Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case TO-253-4, TO-253AA
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-143B
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 40mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 10mA, 8V
  • Frequency-Transition 11GHz
  • Noise-Figure-dB-Typ-f 0.6dB @ 900MHz
  • Gain 21.5dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 65 mA
  • Continuous-Collector-Current 10 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU530R

BFU530R Specifications

BFU530R FAQ
  • A: At what frequency does the Series?

    Q: The product Series is Automotive, AEC-Q101.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-253-4, TO-253AA

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-143B.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 40mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 60 @ 10mA, 8V

  • A: Is the cutoff frequency of the product Noise-Figure-dB-Typ-f?

    Q: Yes, the product's Noise-Figure-dB-Typ-f is indeed 0.6dB @ 900MHz

  • A: At what frequency does the Gain?

    Q: The product Gain is 21.5dB.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 450 mW

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 40 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 900 MHz

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 16 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 2 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 65 mA.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 10 mA.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 60

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