| Mfr. #: | BFU530XVL |
|---|---|
| Manufacturer: | NXP Semiconductors |
| Description: | RF Bipolar Transistors NPN wideband silicon RF transisto |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | BFU530XVL Datasheet |
Product belongs to the - series. Tape & Reel (TR) is the packaging method for this product TO-253-4, TO-253AA Surface Mount mounting type Supplier device package: SOT-143B Transistor type: NPN Maximum current collector Ic is 40mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 10mA, 8V. 1.1dB @ 1.8GHz typical noise figure The device offers a 16.5dB of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFU530XVL Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed -
A: What is the Packaging of the product?
Q: The Packaging of the product is Tape & Reel (TR).
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-253-4, TO-253AA.
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is SOT-143B.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 40mA
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 12V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 10mA, 8V.
A: What is the Noise-Figure-dB-Typ-f of the product?
Q: The Noise-Figure-dB-Typ-f of the product is 1.1dB @ 1.8GHz.
A: What is the Gain of the product?
Q: The Gain of the product is 16.5dB.