| Mfr. #: | BFU550AVL |
|---|---|
| Manufacturer: | NXP Semiconductors |
| Description: | RF Bipolar Transistors NPN wideband silicon RF transisto |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | BFU550AVL Datasheet |
Product belongs to the - series. Tape & Reel (TR) is the packaging method for this product TO-236-3, SC-59, SOT-23-3 Surface Mount mounting type Supplier device package: SOT-23 (TO-236AB) Transistor type: NPN Maximum current collector Ic is 50mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 15mA, 8V. 1.4dB @ 1.8GHz typical noise figure The device offers a 12dB of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFU550AVL Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed -
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tape & Reel (TR)
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-236-3, SC-59, SOT-23-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed SOT-23 (TO-236AB)
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 50mA.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 15mA, 8V.
A: At what frequency does the Noise-Figure-dB-Typ-f?
Q: The product Noise-Figure-dB-Typ-f is 1.4dB @ 1.8GHz.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed 12dB