| Mfr. #: | BFU550VL |
|---|---|
| Manufacturer: | NXP Semiconductors |
| Description: | RF Bipolar Transistors NPN wideband silicon RF transisto |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | BFU550VL Datasheet |
Product belongs to the - series. Tape & Reel (TR) is the packaging method for this product TO-253-4, TO-253AA Surface Mount mounting type Supplier device package: SOT-143B Transistor type: NPN Maximum current collector Ic is 50mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 15mA, 8V. 1.3dB @ 1.8GHz typical noise figure The device offers a 15dB of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFU550VL Specifications
A: What is the Series of the product?
Q: The Series of the product is -.
A: At what frequency does the Packaging?
Q: The product Packaging is Tape & Reel (TR).
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-253-4, TO-253AA
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is SOT-143B.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 50mA.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 60 @ 15mA, 8V
A: At what frequency does the Noise-Figure-dB-Typ-f?
Q: The product Noise-Figure-dB-Typ-f is 1.3dB @ 1.8GHz.
A: At what frequency does the Gain?
Q: The product Gain is 15dB.