| Mfr. #: | BFU550WF |
|---|---|
| Manufacturer: | NXP Semiconductors |
| Description: | RF Bipolar Transistors NPN wideband silicon RF transisto |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | BFU550WF Datasheet |
Product belongs to the - series. Tape & Reel (TR) is the packaging method for this product SC-70, SOT-323 Surface Mount, Gull Wing mounting type Supplier device package: SC-70 Transistor type: NPN Maximum current collector Ic is 50mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 15mA, 8V. 1.3dB @ 1.8GHz typical noise figure The device offers a 12dB of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFU550WF Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed -
A: What is the Packaging of the product?
Q: The Packaging of the product is Tape & Reel (TR).
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed SC-70, SOT-323
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount, Gull Wing.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed SC-70
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 50mA
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 15mA, 8V.
A: At what frequency does the Noise-Figure-dB-Typ-f?
Q: The product Noise-Figure-dB-Typ-f is 1.3dB @ 1.8GHz.
A: At what frequency does the Gain?
Q: The product Gain is 12dB.