BFU580GX

Mfr. #: BFU580GX
Manufacturer: NXP Semiconductors
Description: RF TRANS NPN 12V 11GHZ SOT223
Lifecycle: New from this manufacturer.
Datasheet: BFU580GX Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU580GX Overview

Product belongs to the NPI Part Build_RF Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Surface Mount mounting type Supplier device package: SOT-223 Configuration Dual Transistor type: NPN Maximum current collector Ic is 60mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 30mA, 8V. 1.4dB @ 1.8GHz typical noise figure The device offers a 10.5dB of 26dB. Power-off control: 1000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 100 mA This product is capable of handling a 30 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU580GX Image

BFU580GX

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU580GX Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series NPI Part Build_RF Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-223
  • Configuration Dual
  • Power-Max 1W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 60mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 30mA, 8V
  • Frequency-Transition 11GHz
  • Noise-Figure-dB-Typ-f 1.4dB @ 1.8GHz
  • Gain 10.5dB
  • Pd-Power-Dissipation 1000 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 100 mA
  • Continuous-Collector-Current 30 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU580GX

BFU580GX Specifications

BFU580GX FAQ
  • A: At what frequency does the Series?

    Q: The product Series is NPI Part Build_RF Transistors.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-261-4, TO-261AA.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-223

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 60mA

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 12V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 60 @ 30mA, 8V

  • A: What is the Noise-Figure-dB-Typ-f of the product?

    Q: The Noise-Figure-dB-Typ-f of the product is 1.4dB @ 1.8GHz.

  • A: At what frequency does the Gain?

    Q: The product Gain is 10.5dB.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 1000 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 40 C.

  • A: What is the Operating-Frequency of the product?

    Q: The Operating-Frequency of the product is 900 MHz.

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 16 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 2 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 100 mA.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 30 mA.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 60

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