| Mfr. #: | BFU580QX |
|---|---|
| Manufacturer: | NXP Semiconductors |
| Description: | RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | BFU580QX Datasheet |
Product belongs to the NPI Part Build_RF Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-243AA Si is the technology used. Surface Mount mounting type Supplier device package: SOT-89-3 Configuration Dual Transistor type: NPN Maximum current collector Ic is 60mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 30mA, 8V. 1.3dB @ 1.8GHz typical noise figure The device offers a 8.5dB of 26dB. Power-off control: 1000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 100 mA This product is capable of handling a 30 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFU580QX Specifications
A: At what frequency does the Series?
Q: The product Series is NPI Part Build_RF Transistors.
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-243AA
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is SOT-89-3.
A: What is the Configuration of the product?
Q: The Configuration of the product is Dual.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 60mA.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 30mA, 8V.
A: At what frequency does the Noise-Figure-dB-Typ-f?
Q: The product Noise-Figure-dB-Typ-f is 1.3dB @ 1.8GHz.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed 8.5dB
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 1000 mW
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 40 C.
A: At what frequency does the Operating-Frequency?
Q: The product Operating-Frequency is 900 MHz.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 16 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 2 V
A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?
Q: Yes, the product's Maximum-DC-Collector-Current is indeed 100 mA
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 30 mA.
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 60