BFU590GX

Mfr. #: BFU590GX
Manufacturer: NXP Semiconductors
Description: RF TRANS NPN 12V 8.5GHZ SOT223
Lifecycle: New from this manufacturer.
Datasheet: BFU590GX Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU590GX Overview

Product belongs to the NPI Part Build_RF Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Surface Mount mounting type Supplier device package: SC-73 Configuration Dual Transistor type: NPN Maximum current collector Ic is 200mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 80mA, 8V. - typical noise figure The device offers a 8dB of 26dB. Power-off control: 2000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 300 mA This product is capable of handling a 80 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU590GX Image

BFU590GX

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU590GX Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series NPI Part Build_RF Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SC-73
  • Configuration Dual
  • Power-Max 2W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 200mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 80mA, 8V
  • Frequency-Transition 8.5GHz
  • Noise-Figure-dB-Typ-f -
  • Gain 8dB
  • Pd-Power-Dissipation 2000 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 300 mA
  • Continuous-Collector-Current 80 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU590GX

BFU590GX Specifications

BFU590GX FAQ
  • A: At what frequency does the Series?

    Q: The product Series is NPI Part Build_RF Transistors.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-261-4, TO-261AA.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SC-73

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 200mA

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 12V

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 80mA, 8V.

  • A: What is the Noise-Figure-dB-Typ-f of the product?

    Q: The Noise-Figure-dB-Typ-f of the product is -.

  • A: At what frequency does the Gain?

    Q: The product Gain is 8dB.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 2000 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 40 C

  • A: What is the Operating-Frequency of the product?

    Q: The Operating-Frequency of the product is 900 MHz.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 16 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 2 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 300 mA.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 80 mA

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 60.

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