| Mfr. #: | BFU660F,115 |
|---|---|
| Manufacturer: | NXP Semiconductors |
| Description: | RF Bipolar Transistors Single NPN 21GHz |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | BFU660F,115 Datasheet |
Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product SOT-343F Surface Mount mounting type Supplier device package: 4-DFP Transistor type: NPN Maximum current collector Ic is 60mA . Maximum collector-emitter breakdown voltage of 5.5V DC current gain minimum (hFE) of Ic/Vce at 90 @ 10mA, 2V. 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz typical noise figure The device offers a 12dB ~ 21dB of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFU660F,115 Specifications
A: At what frequency does the Series?
Q: The product Series is -.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: At what frequency does the Package-Case?
Q: The product Package-Case is SOT-343F.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 4-DFP.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 60mA
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 5.5V.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 90 @ 10mA, 2V
A: What is the Noise-Figure-dB-Typ-f of the product?
Q: The Noise-Figure-dB-Typ-f of the product is 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed 12dB ~ 21dB