BUL416T

Mfr. #: BUL416T
Manufacturer: STMicroelectronics
Description: Bipolar Transistors - BJT NPN HI-VOLT FAST SW
Lifecycle: New from this manufacturer.
Datasheet: BUL416T Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BUL416T Overview

Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Transistor type: NPN Maximum current collector Ic is 6A . Maximum collector-emitter breakdown voltage of 800V DC current gain minimum (hFE) of Ic/Vce at 18 @ 700mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 1.33A, 4A Power-off control: 110 W Maximum operating temperature of + 150 C Rated VCEO up to 800 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 9 A This product is capable of handling a 6 A continuous collector current. Minimum hfe for DC collector-base gain is 18. 32 of 605.

BUL416T Image

BUL416T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BUL416T Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 1000V Transistors
  • Packaging Tube
  • Unit-Weight 0.081130 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Power-Max 110W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 6A
  • Voltage-Collector-Emitter-Breakdown-Max 800V
  • DC-Current-Gain-hFE-Min-Ic-Vce 18 @ 700mA, 5V
  • Vce-Saturation-Max-Ib-Ic 1.5V @ 1.33A, 4A
  • Current-Collector-Cutoff-Max 250μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 800 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 9 V
  • Maximum-DC-Collector-Current 9 A
  • Continuous-Collector-Current 6 A
  • DC-Collector-Base-Gain-hfe-Min 18
  • DC-Current-Gain-hFE-Max 32

BUL416T

BUL416T Specifications

BUL416T FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 1000V Transistors

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.081130 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 6A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 800V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 18 @ 700mA, 5V

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.5V @ 1.33A, 4A

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 110 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 800 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 9 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 9 A.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 6 A

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 18.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 32

1680 In Stock
Can ship immediately
Please enter the quantity you need to buy.
Quantity
Unit Price
Ext. Price
1
$1.94
$1.94
10
$1.84
$18.38
100
$1.74
$174.15
500
$1.64
$822.40
1000
$1.55
$1 548.00
Top