CSD18537NQ5AT

CSD18537NQ5AT Overview

Product belongs to the CSD18537NQ5A series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-FET-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3.2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.2 ns of 16 ns. This product has a 4 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 62 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 13 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14.4 ns This product has a 5.8 ns. Qg-Gate-Charge is 14 nC. This product features a 62 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD18537NQ5AT Image

CSD18537NQ5AT Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD18537NQ5A
• Packaging Reel
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case VSON-FET-8
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 3.2 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 3.2 ns
• Rise-Time 4 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 62 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 13 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 14.4 ns
• Typical-Turn-On-Delay-Time 5.8 ns
• Qg-Gate-Charge 14 nC
• Forward-Transconductance-Min 62 S
• Channel-Mode Enhancement

CSD18537NQ5AT FAQ

• A: At what frequency does the Series?

  Q: The product Series is CSD18537NQ5A.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Reel.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is VSON-FET-8.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 3.2 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 3.2 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 4 ns

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 62 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 13 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 14.4 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 5.8 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 14 nC.

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 62 S

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement