CSD19535KTTT

CSD19535KTTT Overview

Product belongs to the CSD19535KTT series. Reel is the packaging method for this product Weight of 0.068654 oz SMD/SMT Mounting-Style Trade name: NexFET. TO-263-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 18 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 200 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.2 V Vgs-th gate-source threshold voltage for efficient power management. The 4.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 21 ns This product has a 9 ns. Qg-Gate-Charge is 75 nC. This product features a 301 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD19535KTTT Image

CSD19535KTTT Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD19535KTT
• Packaging Reel
• Unit-Weight 0.068654 oz
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case TO-263-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 300 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 15 ns
• Rise-Time 18 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 200 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Vgs-th-Gate-Source-Threshold-Voltage 2.2 V
• Rds-On-Drain-Source-Resistance 4.1 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 21 ns
• Typical-Turn-On-Delay-Time 9 ns
• Qg-Gate-Charge 75 nC
• Forward-Transconductance-Min 301 S
• Channel-Mode Enhancement

CSD19535KTTT FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed CSD19535KTT

• A: At what frequency does the Packaging?

  Q: The product Packaging is Reel.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.068654 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: At what frequency does the Tradename?

  Q: The product Tradename is NexFET.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-263-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 300 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 15 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 18 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 200 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.2 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 4.1 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 21 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 9 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 75 nC

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 301 S.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.