| Mfr. #: | CSD25402Q3A |
|---|---|
| Manufacturer: | Texas Instruments |
| Description: | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | CSD25402Q3A Datasheet |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Single Channel This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 20V This product has an 1790pF @ 10V value of 300pF @ 25V. This product's Standard. 72A (Tc) continuous drain-ID current at 25°C; This product has an 8.9 mOhm @ 10A, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 2.8 W Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 7 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 900 mV Vgs-th gate-source threshold voltage for efficient power management. The 8.9 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 25 ns This product has a 10 ns. Qg-Gate-Charge is 7.5 nC. This product features a 59 S of 500 S for high performance. This product operates in Depletion channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD25402Q3A Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-PowerTDFN.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 8-VSON (3.3x3.3).
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single Channel
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET P-Channel, Metal Oxide
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 P-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 20V
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 1790pF @ 10V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 72A (Tc).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 8.9 mOhm @ 10A, 4.5V.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 2.8 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 125 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 12 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 7 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is - 12 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is - 15 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is - 20 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 900 mV.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.9 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is P-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 25 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 10 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 7.5 nC
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 59 S.
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Depletion.