MRF1550FNT1

Mfr. #: MRF1550FNT1
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors LDMOS FET HI PWR TO272FN
Lifecycle: New from this manufacturer.
Datasheet: MRF1550FNT1 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MRF1550FNT1 Overview

Product belongs to the MRF1550N series. Type: RF Power MOSFET Reel is the packaging method for this product Weight of 0.045124 oz SMD/SMT Mounting-Style TO-272-6 EP Si is the technology used. The device offers a 14.5 dB of 26dB. Power-off control: 165 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 175 MHz. This product's +/- 20 V. The ID of continuous drain current is 12 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The transistor polarity is N-Channel.

MRF1550FNT1 Image

MRF1550FNT1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MRF1550FNT1 Specifications
  • Manufacturer Freesca
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MRF1550N
  • Type RF Power MOSFET
  • Packaging Reel
  • Unit-Weight 0.045124 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-272-6 EP
  • Technology Si
  • Gain 14.5 dB
  • Output-Power 50 W
  • Pd-Power-Dissipation 165 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 175 MHz
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 12 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Transistor-Polarity N-Channel

MRF1550FNT1

MRF1550FNT1 Specifications

MRF1550FNT1 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MRF1550N

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed RF Power MOSFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.045124 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-272-6 EP.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Gain?

    Q: The product Gain is 14.5 dB.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 165 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 175 MHz.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 12 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 40 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

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1
$41.56
$41.56
10
$39.49
$394.87
100
$37.41
$3 740.85
500
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$17 665.15
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