| Mfr. #: | PD57006-E |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | RF MOSFET Transistors RF POWER TRANS |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | PD57006-E Datasheet |


Product belongs to the PD57006-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 15 dB at 945 MHz of 26dB. Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 1 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 0.58 S of 500 S for high performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57006-E Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed PD57006-E
A: At what frequency does the Type?
Q: The product Type is RF Power MOSFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed PowerSO-10RF (Formed Lead)
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Gain of the product?
Q: The Gain of the product is 15 dB at 945 MHz.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 20 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: At what frequency does the Operating-Frequency?
Q: The product Operating-Frequency is 1 GHz.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 1 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 65 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 0.58 S.