| Mfr. #: | PD57018STR-E |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | RF MOSFET Transistors POWER R.F. |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | PD57018STR-E Datasheet |


Product belongs to the PD57018-E series. Type: RF Power MOSFET Reel is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Straight Lead) Si is the technology used. The device offers a 16.5 dB at 945 MHz of 26dB. Power-off control: 31.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The 760 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57018STR-E Specifications
A: At what frequency does the Series?
Q: The product Series is PD57018-E.
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed PowerSO-10RF (Straight Lead)
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed 16.5 dB at 945 MHz
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 31.7 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: At what frequency does the Operating-Frequency?
Q: The product Operating-Frequency is 1 GHz.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2.5 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 760 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.