STD845DN40

Mfr. #: STD845DN40
Manufacturer: STMicroelectronics
Description: Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat)
Lifecycle: New from this manufacturer.
Datasheet: STD845DN40 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD845DN40 Overview

Product belongs to the STD845DN40 series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 12 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 1A, 4A Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 500 mV The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 10.

STD845DN40 Image

STD845DN40

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD845DN40 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Arrays
  • Series STD845DN40
  • Packaging Tube
  • Unit-Weight 0.080001 oz
  • Mounting-Style Through Hole
  • Package-Case 8-DIP (0.300", 7.62mm)
  • Mounting-Type Through Hole
  • Supplier-Device-Package 8-DIP
  • Configuration Dual
  • Power-Max 3W
  • Transistor-Type 2 NPN (Dual)
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 400V
  • DC-Current-Gain-hFE-Min-Ic-Vce 12 @ 2A, 5V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 1A, 4A
  • Current-Collector-Cutoff-Max 250μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 45 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 400 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 500 mV
  • Collector-Base-Voltage-VCBO 700 V
  • Emitter-Base-Voltage-VEBO 9 V to 18 V
  • Maximum-DC-Collector-Current 8 A
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 10

STD845DN40

STD845DN40 Specifications

STD845DN40 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is STD845DN40.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.080001 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 8-DIP (0.300", 7.62mm).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-DIP

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 2 NPN (Dual).

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 4A.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 400V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 12 @ 2A, 5V.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 500mV @ 1A, 4A.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 45 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 400 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 500 mV.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 700 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 9 V to 18 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 8 A

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 4 A

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 10

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