STH210N75F6-2

Mfr. #: STH210N75F6-2
Manufacturer: STMicroelectronics
Description: IGBT Transistors MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI
Lifecycle: New from this manufacturer.
Datasheet: STH210N75F6-2 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STH210N75F6-2 Overview

Product belongs to the STH210N75F6-2 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The 2.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 171 nC.

STH210N75F6-2 Image

STH210N75F6-2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STH210N75F6-2 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STH210N75F6-2
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 180 A
  • Vds-Drain-Source-Breakdown-Voltage 75 V
  • Rds-On-Drain-Source-Resistance 2.8 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 171 nC

STH210N75F6-2

STH210N75F6-2 Specifications

STH210N75F6-2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is STH210N75F6-2.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.139332 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 300 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 180 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 75 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.8 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 171 nC.

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