STP120N4F6

Mfr. #: STP120N4F6
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 40V 80A TO-220AB
Lifecycle: New from this manufacturer.
Datasheet: STP120N4F6 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP120N4F6 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 110 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 70 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 80 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 4.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 40 ns This product has a 20 ns. Qg-Gate-Charge is 65 nC. This product operates in Enhancement channel mode for optimal performance.

STP120N4F6 Image

STP120N4F6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP120N4F6 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series N-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 20 ns
  • Rise-Time 70 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 80 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 4.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 40 ns
  • Typical-Turn-On-Delay-Time 20 ns
  • Qg-Gate-Charge 65 nC
  • Channel-Mode Enhancement

STP120N4F6

STP120N4F6 Specifications

STP120N4F6 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel STripFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 110 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 175 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 20 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 70 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 80 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 40 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 4.3 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 40 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 20 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 65 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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