| Mfr. #: | STY80NM60N |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N-channel 600 V, 74A Power II Mdmesh |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STY80NM60N Datasheet |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 74 A; The Rds On - Drain-Source Resistance of the product is 35 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 25 V. Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 200 ns - 55 C minimum operating temperature The power dissipation is 447 W. 65 ns Rise Time Product belongs to the N-channel MDmesh series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 440 ns; The 50 ns typical turn-on delay time The Unit Weight is 1.340411 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STY80NM60N Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-247-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 600 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 74 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 35 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 25 V
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 200 ns.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 447 W
A: At what frequency does the Rise Time?
Q: The product Rise Time is 65 ns.
A: What is the Series of the product?
Q: The Series of the product is N-channel MDmesh.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 440 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 50 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 1.340411 oz.