CGH55015F2

Mfr. #:: CGH55015F2
Manufacturer:: N/A
Description:: RF JFET Transistors GaN HEMT 4.5-6.0GHz, 10 Watt
Lifecycle:: New from this manufacturer.
Datasheet:: CGH55015F2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: CGH55015F2 more Information

Product Attribute
Attribute Value

Manufacturer:: Cree, Inc.

Product Category:: RF JFET Transistors

RoHS:: Y

Transistor Type:: HEMT

Technology:: GaN

Gain:: 12 dB

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 120 V

Vgs - Gate-Source Breakdown Voltage:: - 10 V to 2 V

Id - Continuous Drain Current:: 1.5 A

Output Power:: 10 W

Maximum Drain Gate Voltage:: -

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: -

Mounting Style:: Screw Mount

Package / Case:: 440166

Packaging:: Tray

Application:: -

Configuration:: Single

Height:: 3.43 mm

Length:: 14.09 mm

Operating Frequency:: 4.5 GHz to 6 GHz

Operating Temperature Range:: -

Product:: GaN HEMT

Width:: 4.19 mm

Brand:: Wolfspeed / Cree

Forward Transconductance - Min:: -

Gate-Source Cutoff Voltage:: -

Class:: -

Fall Time:: -

NF - Noise Figure:: -

P1dB - Compression Point:: -

Product Type:: RF JFET Transistors

Rds On - Drain-Source Resistance:: -

Rise Time:: -

Factory Pack Quantity:: 60

Subcategory:: Transistors

Typical Turn-Off Delay Time:: -

Vgs th - Gate-Source Threshold Voltage:: - 3 V

Unit Weight:: 0.017637 oz

Tags: CGH55015F2, CGH55015, CGH5501, CGH55, CGH5, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGH55015F2 Description

***i-Key: RF MOSFET HEMT 28V 440166

***hardson RFPD: RF POWER TRANSISTOR

CGH55015F2 More Information

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

Part #	Mfg.	Description	Stock	Price
CGH55015F2 DISTI # CGH55015F2-ND	Wolfspeed	RF MOSFET HEMT 28V 440166 RoHS: Compliant Min Qty: 1 Container: Tray	133In Stock	1:$68.0200
CGH55015F2 DISTI # 941-CGH55015F2	Cree, Inc.	RF JFET Transistors GaN HEMT 4.5-6.0GHz, 10 Watt RoHS: Compliant	93	1:$68.0200 10:$64.3500 25:$62.5200 50:$61.6000 100:$61.1400
CGH55015F2 DISTI # CGH55015F2	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	60	1:$68.0200

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Availability

Stock:: 62
On Order:: 2045
Enter Quantity:

Current price of CGH55015F2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$68.72~~; ~~$68.72~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

CGH55015F2 3
CGH55015 8
CGH5501 9
CGH55 28
CGH5 45
CGH 418

CGH55015F2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes