2SK4197FS

Mfr. #:: 2SK4197FS
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 600V 3.3A TO-220F-3
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK4197FS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: ON Semiconductor

Product Category: Transistors - FETs, MOSFETs - Single

Series: 2SK4197FS

Packaging: Tube

Unit-Weight: 0.211644 oz

Mounting-Style: Through Hole

Package-Case: TO-220-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 2 W

Id-Continuous-Drain-Current: 3.5 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Rds-On-Drain-Source-Resistance: 3.25 Ohms

Transistor-Polarity: N-Channel

Tags: 2SK4197, 2SK419, 2SK41, 2SK4, 2SK

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Vacuum Packaging with PL

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2SK4197FS Description

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 3.3A Tc 3.3A 2W 12ns

***emi: N-Channel Power MOSFET, 600V, 3.5A, 3.25Ω, TO-220F-3FS N-Channel Power MOSFET, 600V, 3.5A, 3.25Ohm, TO-220F-3FS

***r Electronics: Power Field-Effect Transistor, 3.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 600V 3.3A 3-Pin(3+Tab) TO-220F-3FS

***(Formerly Allied Electronics): 2SK4198FS N-channel MOSFET Transistor; 5 A; 600 V; 3-Pin TO-220F

***emi: N-Channel Power MOSFET, 600V, 5A, 2.34Ohm, TO-220F-3FS

***ical: Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220F-3FS Tube

***icroelectronics: N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in TO-220 package

***ure Electronics: N-Channel 525 V 2.6 Ohm Flange Mount PowerMesh Power MosFet - TO-220

***et: Trans MOSFET N-CH 525V 2.5A 3-Pin(3+Tab) TO-220FP Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CH, 525V, 2.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:525V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***nell: MOSFET, N CH, 525V, 2.5A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 2.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 20W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F

***ure Electronics: Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F

***enic: 900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package

***ical: Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***i-Key: MOSFET N-CH 500V 3A TO-220F

***r Electronics: Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ser: MOSFETs N-CH/400V/ .6A/3.4OHM

***icroelectronics: N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP

***(Formerly Allied Electronics): STP4NK60ZFP, N-channel MOSFET Transistor 4A 600V, 3-Pin TO-220FP

*** Source Electronics: MOSFET N-CH 600V 4A TO-220FP / Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:25W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

Part #	Mfg.	Description	Stock	Price
2SK4197FS DISTI # 2SK4197FS-ND	ON Semiconductor	MOSFET N-CH 600V 3.3A TO-220F-3 RoHS: Compliant Min Qty: 400 Container: Tube	Limited Supply - Call
2SK4197FS DISTI # 863-2SK4197FS	ON Semiconductor	MOSFET NCH 10V DRIVE SERIES RoHS: Compliant	0
2SK4197FS	ON Semiconductor	RoHS: Not Compliant	59461	1000:$0.7100 500:$0.7400 100:$0.7700 25:$0.8100 1:$0.8700

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2SK4197FS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes