IPB180N08S402ATMA1

Mfr. #:: IPB180N08S402ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CHANNEL 75/80V
Lifecycle:: New from this manufacturer.
Datasheet:: IPB180N08S402ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPB180N08S402ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 1.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 167 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 277 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 50 ns

Product Type:: MOSFET

Rise Time:: 15 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 50 ns

Typical Turn-On Delay Time:: 30 ns

Part # Aliases:: IPB180N08S4-02 SP000983458

Unit Weight:: 0.053885 oz

Tags: IPB180N0, IPB180N, IPB18, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IPB180N08S402ATMA1 Description

***ineon SCT: 80V, N-Ch, 2.2 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

***ical: Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

***nell: MOSFET, AEC-Q101, N-CH, 80V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 277W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Ultra low R DSon; Ultra high I D

***ark: Mosfet Transistor, N Channel, 195 A, 60 V, 0.00165 Ohm, 10 V, 3.7 V

*** Source Electronics: MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R

***trelec: Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - D2PAK

***(Formerly Allied Electronics): MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK

*** Stop Electro: Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V

***icroelectronics: N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

***ure Electronics: STH270N8F7 Series 80 V 180 A 0.0021 Ohm N-Ch STripFET F7 Power Mosfet - H2PAK-6

***ical: Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) H2PAK T/R

***(Formerly Allied Electronics): MOSFET N-Ch 80V 180A STripFET H2PAK6

*** Electronic Components: MOSFET N-CH 80V 17mOhm 180A STripFET VII

***r Electronics: Power Field-Effect Transistor, 180A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 80V, 180A, H2PAK-6, Tape and Reel

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 60 V 2.4 mOhm 186 nC HEXFET® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK Tube

***(Formerly Allied Electronics): MOSFET, 60V,195A, 2.4mOhm, 186nC, D2PAK

*** Stop Electro: Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***r Electronics: Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) H2PAK T/R

***icroelectronics: Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

***nell: MOSFET, AEC-Q101, N-CH, 80V, 180A; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 315W; Transistor Case Style: H2PAK-6; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ark: N CH POWER MOSFET, HEXFET, 100V, 190A, D2PAK-7; Transistor Polarity:N Channel; C

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS

***ure Electronics: Single N-Channel 100 V 4 mOhm 230 nC HEXFET® Power Mosfet - D2PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R

***Yang: Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (

***ment14 APAC: MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Source Voltage Vds:100V; On Resistance

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

***nell: MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 190A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***icroelectronics: N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package

***r Electronics: Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) H2PAK T/R

***ure Electronics: N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6

***icroelectronics SCT: Power MOSFETs, 60V, 180A, H2PAK-6, Tape and Reel

IPB180N08S402ATMA1 More Information

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Market price

Part #	Mfg.	Description	Stock	Price
IPB180N08S402ATMA1 DISTI # V36:1790_06378825	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A Automotive T/R RoHS: Compliant	0
IPB180N08S402ATMA1 DISTI # V72:2272_06378825	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A Automotive T/R RoHS: Compliant	0
IPB180N08S402ATMA1 DISTI # IPB180N08S402ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	146In Stock	500:$3.4845 100:$4.0933 10:$4.9960 1:$5.5600
IPB180N08S402ATMA1 DISTI # IPB180N08S402ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	146In Stock	500:$3.4845 100:$4.0933 10:$4.9960 1:$5.5600
IPB180N08S402ATMA1 DISTI # IPB180N08S402ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$2.7105 1000:$2.8532
IPB180N08S402ATMA1 DISTI # IPB180N08S402ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Bulk (Alt: IPB180N08S402ATMA1) RoHS: Compliant Min Qty: 145 Container: Bulk	Americas - 0
IPB180N08S402ATMA1 DISTI # IPB180N08S402ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N08S402ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$2.2900 10000:$2.2900 4000:$2.3900 2000:$2.4900 1000:$2.5900
IPB180N08S402ATMA1 DISTI # SP000983458	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP000983458) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.9900 6000:€2.1900 4000:€2.3900 2000:€2.4900 1000:€2.5900
IPB180N08S402ATMA1 DISTI # 13AC9028	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 80V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	500:$3.1000 250:$3.4500 100:$3.6500 50:$3.8300 25:$4.0200 10:$4.2000 1:$4.9500
IPB180N08S4-02 DISTI # 726-IPB180N08S4-02	Infineon Technologies AG	MOSFET N-CHANNEL 75/80V RoHS: Compliant	743	1:$4.9000 10:$4.1600 100:$3.6100 250:$3.4200 500:$3.0700 1000:$2.5900 2000:$2.4600
IPB180N08S402ATMA1 DISTI # 726-IPB180N08S402ATM	Infineon Technologies AG	MOSFET N-CHANNEL 75/80V RoHS: Compliant	10	1:$4.9000 10:$4.1600 100:$3.6100 250:$3.4200 500:$3.0700 1000:$2.5900 2000:$2.4600
IPB180N08S402ATMA1 DISTI # 2725841	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 80V, TO-263 RoHS: Compliant	0	500:$5.2900 100:$6.5300 10:$7.9600 1:$8.9100
IPB180N08S402ATMA1 DISTI # 2725841	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 80V, TO-263	0	500:£2.4100 250:£2.6900 100:£2.8400 10:£3.2600 1:£4.2800

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IPB180N08S402ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes