DMN63D1LT-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-523-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

320 mA

Rds On - Drain-Source Resistance:

2 Ohms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

392 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

330 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

80 mS

Fall Time:

9.9 ns

Product Type:

MOSFET

Rise Time:

3.4 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15.7 ns

Typical Turn-On Delay Time:

3.9 ns

Unit Weight:

0.000071 oz

Tags

DMN63D1, DMN63D, DMN63, DMN6, DMN