IGLD60R070D1AUMA1

Mfr. #:: IGLD60R070D1AUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET 600V CoolGaN Power Transistor
Lifecycle:: New from this manufacturer.
Datasheet:: IGLD60R070D1AUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IGLD60R070D1AUMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: GaN

Mounting Style:: SMD/SMT

Package / Case:: PG-LSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 15 A

Rds On - Drain-Source Resistance:: 70 mOhms

Vgs th - Gate-Source Threshold Voltage:: 0.9 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 5.8 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 114 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolGaN

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 13 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 15 ns

Typical Turn-On Delay Time:: 15 ns

Part # Aliases:: SP001705420

Tags: IGL

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGLD60R070D1AUMA1 More Information

CoolGaN™ Gallium Nitride HEMTs: Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.

Market price

Part #	Mfg.	Description	Stock	Price
IGLD60R070D1AUMA1 DISTI # V72:2272_22710689	Infineon Technologies AG	IGLD60R070D1AUMA1	2918	1000:$15.1500 500:$15.6300 250:$16.1200 100:$16.6000 50:$17.3700 25:$18.9300 10:$19.1900 1:$21.3500
IGLD60R070D1AUMA1 DISTI # IGLD60R070D1AUMA1TR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8SON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$15.1523
IGLD60R070D1AUMA1 DISTI # IGLD60R070D1AUMA1CT-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$17.0033 100:$18.7282 10:$21.9320 1:$23.7800
IGLD60R070D1AUMA1 DISTI # IGLD60R070D1AUMA1DKR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$17.0033 100:$18.7282 10:$21.9320 1:$23.7800
IGLD60R070D1AUMA1 DISTI # 32436883	Infineon Technologies AG	IGLD60R070D1AUMA1	2918	1000:$15.1500 500:$15.6300 250:$16.1200 100:$16.6000 50:$17.3700 25:$18.9300 10:$19.1900 1:$21.3500
IGLD60R070D1AUMA1 DISTI # IGLD60R070D1AUMA1	Infineon Technologies AG	GAN HV - Tape and Reel (Alt: IGLD60R070D1AUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
IGLD60R070D1AUMA1 DISTI # SP001705420	Infineon Technologies AG	GAN HV (Alt: SP001705420) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€13.2900 18000:€13.8900 12000:€14.5900 6000:€14.7900 3000:€15.2900
IGLD60R070D1AUMA1 DISTI # 84AC1768	Infineon Technologies AG	MOSFET, N-CH, 600V, 15A, 150DEG C, 114W,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes	167	1000:$13.8200 500:$15.8900 250:$16.6900 100:$17.4900 50:$18.5300 25:$19.5600 10:$20.4800 1:$22.2100
IGLD60R070D1AUMA1 DISTI # 726-IGLD60R070D1AUMA	Infineon Technologies AG	MOSFET 600V CoolGaN Power Transistor RoHS: Compliant	158	1:$21.9900 5:$21.7600 10:$20.2800 25:$19.3700 100:$17.3200 250:$16.5200 500:$15.7300 1000:$13.6800
IGLD60R070D1AUMA1 DISTI # 2981535	Infineon Technologies AG	MOSFET, N-CH, 600V, 15A, 150DEG C, 114W RoHS: Compliant	167	3000:$22.8000 500:$25.2600 100:$26.1000 50:$28.4700 1:$31.3200 10:$31.3200
IGLD60R070D1AUMA1 DISTI # 2981535	Infineon Technologies AG	MOSFET, N-CH, 600V, 15A, 150DEG C, 114W	147	100:£12.5600 50:£13.3000 10:£14.0400 5:£15.7700 1:£15.9400

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Availability

Stock:: 149
On Order:: 2132
Enter Quantity:

Current price of IGLD60R070D1AUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$21.99~~; ~~$21.99~~

5: ~~$21.76~~; ~~$108.80~~

10: ~~$20.28~~; ~~$202.80~~

25: ~~$19.37~~; ~~$484.25~~

100: ~~$17.32~~; ~~$1 732.00~~

250: ~~$16.52~~; ~~$4 130.00~~

500: ~~$15.73~~; ~~$7 865.00~~

1000: ~~$13.68~~; ~~$13 680.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IGLD60R070D1AUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes