BLV10

Product Attribute

Attribute Value

Manufacturer:

Advanced Semiconductor, Inc.

Product Category:

RF Bipolar Transistors

RoHS:

Y

Transistor Type:

Bipolar Power

Technology:

Si

Transistor Polarity:

NPN

DC Collector/Base Gain hfe Min:

10

Collector- Emitter Voltage VCEO Max:

18 V

Emitter- Base Voltage VEBO:

4 V

Continuous Collector Current:

1.5 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Configuration:

Single

Mounting Style:

Screw Mount

Package / Case:

SOT-123

Packaging:

Tray

Operating Frequency:

175 MHz

Type:

RF Bipolar Power

Brand:

Advanced Semiconductor, Inc.

Gain Bandwidth Product fT:

950 MHz

Maximum DC Collector Current:

4 A

Pd - Power Dissipation:

20 W

Product Type:

RF Bipolar Transistors

Subcategory:

Transistors

Tags

BLV10, BLV1, BLV