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NTZD3156CT1G

NTZD3156CT1G
Mfr. #:
NTZD3156CT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20/6V Comp w/100K G-S Resistors
Lifecycle:
New from this manufacturer.
Datasheet:
NTZD3156CT1G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTZD3156CT1G DatasheetNTZD3156CT1G Datasheet (P4-P6)NTZD3156CT1G Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-563-6
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
540 mA
Rds On - Drain-Source Resistance:
550 mOhms, 900 mOhms
Vgs - Gate-Source Voltage:
6 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
280 mW
Configuration:
Dual
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.55 mm
Length:
1.6 mm
Product:
MOSFET Small Signal
Transistor Type:
1 N-Channel, 1 P-Channel
Type:
Small Signal MOSFET
Width:
1.2 mm
Brand:
ON Semiconductor
Forward Transconductance - Min:
1.46 S, 1.18 S
Fall Time:
10 ns, 19.5 ns
Product Type:
MOSFET
Rise Time:
5.3 ns, 6.5 ns
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
21 ns, 29 ns
Typical Turn-On Delay Time:
7.7 ns, 9.2 ns
Unit Weight:
0.000106 oz
Tags
NTZD3156, NTZD3, NTZD, NTZ
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Small Signal MOSFET 20V 540mA 550 mOhm Dual Complementary SOT-563 With 100K G-S Resistors
***i-Key
MOSFET N/P-CH 20V SOT-563
***an P&S
Small Signal MOSFET 20 V, 540 mA / -20 V, -430 mA Complementary N and P-Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection
***ark
Transistor; Continuous Drain Current, Id:0.54A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:0.28W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
NTZD3156CT1G
DISTI # NTZD3156CT1G-ND		ON SemiconductorMOSFET N/P-CH 20V SOT-563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    NTZD3156CT1G
    DISTI # 863-NTZD3156CT1G    		ON SemiconductorMOSFET 20/6V Comp w/100K G-S Resistors
    RoHS: Compliant    		0
      NTZD3156CT1GON SemiconductorSmall Signal Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor FET
      RoHS: Compliant      		20000
      • 500:$0.1100
      • 1000:$0.1100
      • 25:$0.1200
      • 100:$0.1200
      • 1:$0.1300
      NTZD3156CT1GON SemiconductorSmall Signal MOSFET 20 V, 540 mA / -20 V, -430 mA Complementary N and P-Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection446
      • 1:$0.1200
      • 100:$0.0900
      • 500:$0.0800
      • 1000:$0.0700
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      OMO.#: OMO-NTZD3158PT1G-ON-SEMICONDUCTOR

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      NTZD3152PT1G-CUT TAPE

      Mfr.#: NTZD3152PT1G-CUT TAPE

      OMO.#: OMO-NTZD3152PT1G-CUT-TAPE-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      5500
      Enter Quantity:
      Current price of NTZD3156CT1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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