OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXTK600N04T2

IXTK600N04T2
Mfr. #:
IXTK600N04T2
Manufacturer:
Littelfuse
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXTK600N04T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTK600N04T2 DatasheetIXTK600N04T2 Datasheet (P4-P6)
ECAD Model:
More Information:
IXTK600N04T2 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-264-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
600 A
Rds On - Drain-Source Resistance:
1.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
590 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
1.25 kW
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Product:
MOSFET Gate Drivers
Series:
IXTK600N04
Transistor Type:
1 N-Channel
Type:
TrenchT2 GigaMOS
Brand:
IXYS
Forward Transconductance - Min:
90 S
Fall Time:
250 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
90 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
0.352740 oz
Tags
IXTK60, IXTK6, IXTK, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 40V 600A TO-264
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Part # Mfg. Description Stock Price
IXTK600N04T2
DISTI # IXTK600N04T2-ND		IXYS CorporationMOSFET N-CH 40V 600A TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$16.2800
IXTK600N04T2
DISTI # 747-IXTK600N04T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		14
  • 1:$20.2400
  • 10:$18.4000
  • 25:$17.0200
  • 50:$15.6600
  • 100:$15.2700
  • 250:$14.0000
  • 500:$12.7100
Image Part # Description
IR44273LTRPBF

Mfr.#: IR44273LTRPBF

OMO.#: OMO-IR44273LTRPBF

 Gate Drivers HVIC
1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148

 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
228

Mfr.#: 228

OMO.#: OMO-228

 Phone Connectors 2C FLAT PLUG 1/4"
CSD18511KCS

Mfr.#: CSD18511KCS

OMO.#: OMO-CSD18511KCS

 MOSFET 40V, N ch NexFET MOSFETG , single TO-220, 2.6mOhm 3-TO-220 -55 to 175
CR201-50VE

Mfr.#: CR201-50VE

OMO.#: OMO-CR201-50VE

 Heat Sinks Aluminum heatsink 50mmdegreased
ESP-WROOM-02U

Mfr.#: ESP-WROOM-02U

OMO.#: OMO-ESP-WROOM-02U

 WiFi Modules (802.11) SMD MODULE,ESP8266EX 2MBITS SPI FLASH
IR44273LTRPBF

Mfr.#: IR44273LTRPBF

OMO.#: OMO-IR44273LTRPBF-INFINEON-TECHNOLOGIES

 Gate Drivers HVIC
228

Mfr.#: 228

OMO.#: OMO-228-KEYSTONE-ELECTRONICS

 Battery Holders, Clips & Contacts Cylindrical Battery Contacts, Clips, Holders & Springs Battery CLIP AA
209

Mfr.#: 209

OMO.#: OMO-209-KEYSTONE-ELECTRONICS

 Lamps B-6 INCND SC BAY BASE LP
1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148-ON-SEMICONDUCTOR

 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
Availability
Stock:
Available
On Order:
1992
Enter Quantity:
Current price of IXTK600N04T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$20.24
$20.24
10
$18.40
$184.00
25
$17.02
$425.50
50
$15.66
$783.00
100
$15.27
$1 527.00
250
$14.00
$3 500.00
500
$12.71
$6 355.00
1000
$11.60
$11 600.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top