SIHB12N60E-GE3

SIHB12N60E-GE3
Mfr. #:
SIHB12N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB12N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N60E-GE3 DatasheetSIHB12N60E-GE3 Datasheet (P4-P6)SIHB12N60E-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIHB12N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
29 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
147 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
19 ns
Product Type:
MOSFET
Rise Time:
19 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
14 ns
Unit Weight:
0.050717 oz
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    TR

    Tanks

    2019-01-22
    A***v
    A***v
    RU

    Everything has come safe and sound

    2019-01-22
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK
***ure Electronics
MOSFET 600V 380MOHM@10V 12A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 600V, 12A, TO-263-3
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB12N60E-GE3
DISTI # V36:1790_09219014
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9136
  • 500000:$0.9150
  • 100000:$0.9941
  • 10000:$1.1110
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # V99:2348_09219014
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9821
  • 500000:$0.9833
  • 100000:$1.0390
  • 10000:$1.1180
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk
146In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8590
  • 6000:$0.8827
  • 4000:$0.9079
  • 2000:$0.9463
  • 1000:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.1800
SIHB12N60E-GE3
DISTI # 68W7031
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant
322
  • 100:$1.0300
  • 250:$1.0300
  • 500:$1.0300
  • 25:$1.1200
  • 50:$1.1200
  • 1:$1.2200
  • 10:$1.2200
SIHB12N60E-GE3
DISTI # 68W7032
Vishay IntertechnologiesMOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant
0
  • 10000:$0.8380
  • 6000:$0.8710
  • 4000:$0.9050
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIHB12N60E-GE3
DISTI # 78-SIHB12N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
840
  • 1:$1.9800
  • 10:$1.7400
  • 100:$1.3700
  • 500:$1.1700
  • 1000:$0.9710
  • 2000:$0.9040
  • 5000:$0.8910
SIHB12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
    SIHB12N60E-GE3
    DISTI # 1451818
    Vishay IntertechnologiesIn a Tube of 50, SIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, TU
    Min Qty: 50
    Container: Tube
    0
    • 50:$0.6980
    SIHB12N60E-GE3
    DISTI # 7689300
    Vishay IntertechnologiesSIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, EA
    Min Qty: 1
    Container: Bulk
    671
    • 1:$0.7150
    SIHB12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    Europe - 900
      SIHB12N60E-GE3
      DISTI # 2364071
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant
      1165
      • 5000:£0.7190
      • 1000:£0.7450
      • 500:£0.9630
      • 250:£1.0300
      • 100:£1.1000
      • 10:£1.4300
      • 1:£1.9500
      SIHB12N60E-GE3
      DISTI # 2364071
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant
      1160
      • 5000:$1.3700
      • 2500:$1.4300
      • 1000:$1.5300
      • 500:$1.8500
      • 100:$2.2500
      • 10:$2.7900
      • 1:$3.1100
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      Availability
      Stock:
      500
      On Order:
      2483
      Enter Quantity:
      Current price of SIHB12N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.08
      $2.08
      10
      $1.72
      $17.20
      100
      $1.34
      $134.00
      500
      $1.17
      $585.00
      1000
      $0.97
      $971.00
      2000
      $0.90
      $1 808.00
      5000
      $0.87
      $4 355.00
      10000
      $0.84
      $8 370.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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